AO6420 60v n-channel mosfet product summary v ds (v) = 60v i d = 4.2a (v gs = 10v) r ds(on) < 60m w (v gs = 10v) r ds(on) < 75m w (v gs = 4.5v) general description the AO6420 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. g d s d d g d s d top view 1 2 3 6 5 4 tsop6 top view bottom view pin1 symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r q jl 35 40 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w w t a =70c 1.28 junction and storage temperature range -55 to 150 c power dissipation 3.4 pulsed drain current b 20 continuous drain current a,f t a =25c maximum junction-to-ambient a steady-state v i d 4.2 drain-source voltage 60 t a =25c p d 2.00 a t a =70c absolute maximum ratings t a =25c unless otherwise noted parameter maximum units v gate-source voltage 20 alpha & omega semiconductor, ltd. www.aosmd.com
AO6420 symbol min typ max units bv dss 60 v 1 t j =55c 5 i gss 100 na v gs(th) 1 2.3 3 v i d(on) 20 a 50 60 t j =125c 85 60 75 m w g fs 13 s v sd 0.78 1 v i s 3 a c iss 450 540 pf c oss 60 pf c rss 25 pf r g 1.65 2 w q g (10v) 9.5 11.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 5.1 7 ns maximum body-diode continuous current dynamic parameters total gate charge input capacitance drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =60v, v gs =0v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v m a gate-body leakage current v ds =0v, v gs = 20v r ds(on) static drain-source on-resistance forward transconductance m w v gs =4.5v, i d =3a v ds =5v, i d =4.2a i s =1a,v gs =0v v gs =10v, i d =4.2a diode forward voltage gate source charge gate drain charge turn-on delaytime total gate charge v gs =10v, v ds =30v, i d =4.2a v gs =0v, v ds =30v, f=1mhz v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance output capacitance alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 5.1 7 ns t r 2.6 4 ns t d(off) 15.9 20 ns t f 2 3 ns t rr 25.1 35 ns q rr 28.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery charge i f =4.2a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =4.2a, di/dt=100a/ m s v gs =10v, v ds =30v, r l =7 w , r gen =3 w turn-on delaytime turn-on rise time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev2: feb. 2012 alpha & omega semiconductor, ltd. www.aosmd.com
AO6420 typical electrical and thermal characteristics: n-c hannel 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.0v 10.0v 5.0v 4.5v 0 5 10 15 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics 20 30 40 50 60 70 80 90 100 0 5 10 15 20 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 normalized on-resistance v gs =4.5v i d =3a vgs=10 i d =4.2a 25 c 125 c v ds =5v v gs =4.5v v gs =10v alpha & omega semiconductor, ltd. www.aosmd.com 20 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 40 60 80 100 120 140 160 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =4.2a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO6420 typical electrical and thermal characteristics: n-c hannel 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss v ds =30v i d = 4.2a t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s 1s alpha & omega semiconductor, ltd. www.aosmd.com 0 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.0 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10s alpha & omega semiconductor, ltd. www.aosmd.com
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